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2000 Oct 16 2
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
FEATURES
• Operating at 3.6 V battery supply
• Power Amplifier (PA) output power:
35 dBm in GSM band and 32.5 dBm in DCS/PCS band
• Input power: 0 dBm in GSM band and 3 dBm in
DCS/PCS band
• Wide operating temperature range from −20 to +85 °C
• HTSSOP20 exposed die pad package.
APPLICATIONS
• Dual-band systems: Low Band (LB) from
880 to 915 MHz hand-held transceivers for E-GSM and
High Band (HB) from 1710 to 1910 MHz for DCS/PCS
applications.
GENERAL DESCRIPTION
The CGY2014TT is a dual-band GSM/DCS/PCS GaAs
Monolithic Microwave Integrated Circuit (MMIC) power
amplifier. The circuit is specifically designed to operate at
3.6 V battery supply voltage.
The power amplifier requires only a 30 dB harmonic
low-pass filter to comply with the transmit spurious
specification.
The voltages applied on pins V
DD
(drain) control the power
of the power amplifier and permit to switch it off.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
DD
positive supply voltage − 3.5 4.2 V
I
DD(LB)
GSM positive peak supply current − 2 − A
P
o(LB)(max)
maximum output power in GSM band 34.5 35 − dBm
I
DD(HB)
DCS/PCS positive peak supply current − 1.5 − A
P
o(HB)(max)
maximum output power in DCS/PCS band 32 32.5 − dBm
T
amb
ambient temperature −20 − +85 °C
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
CGY2014TT HTSSOP20 plastic, heatsink thin shrink small outline package; 20 leads;
body width 4.4 mm
SOT527-1