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TDA8950_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 9 September 2008 15 of 39
NXP Semiconductors
TDA8950
2 × 150 W class-D power amplifier
12.2 Stereo and dual SE application characteristics
[1] R
sL
is the series resistance of inductor of low-pass LC filter in the application.
[2] Output power is measured indirectly; based on R
DSon
measurement. See also Section 13.3.
[3] THD is measured in a bandwidth of 22 Hz to 20 kHz, using AES17 20 kHz brickwall filter. Maximum limit is not guaranteed100 % tested.
[4] V
ripple
= V
ripple(max)
= 2 V (p-p); R
s
= 0 Ω. Measured independently between VDDPn and SGND and between VSSPn and SGND.
[5] B = 22 Hz to 20 kHz, using AES17 20 kHz brickwall filter.
[6] B = 22 Hz to 22 kHz, using AES17 20 kHz brickwall filter; independent of R
s
.
[7] P
o
= 1 W; R
s
= 0 Ω; f
i
= 1 kHz.
[8] V
i
= V
i(max)
= 1 V (RMS); f
i
= 1 kHz.
[9] Leads and bond wires included.
Table 9. Dynamic characteristics
V
P
=
±
35 V; R
L
= 4
Ω
; f
i
= 1 kHz; f
osc
= 345 kHz; R
sL
< 0.1
Ω
[1]
; T
amb
= 25
°
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
P
o
output power L = 22 µH; C = 680 nF; T
j
=85°C
[2]
R
L
=4Ω; THD = 0.5 %; V
P
= ±37 V - 100 - W
R
L
=4Ω; THD = 10 %; V
P
= ±37 V - 150 - W
R
L
=6Ω; THD = 10 %; V
P
= ±37 V - 100 - W
R
L
=4Ω; THD = 10 %; V
P
= ±39 V - 170 - W
THD total harmonic distortion P
o
= 1 W; f
i
= 1 kHz
[3]
- 0.05 - %
P
o
= 1 W; f
i
= 6 kHz
[3]
- 0.05 - %
G
v(cl)
closed-loop voltage gain 29 30 31 dB
SVRR supply voltage ripple rejection between pin VDDPn and SGND
operating; f
i
= 100 Hz
[4]
-90-dB
operating; f
i
= 1 kHz
[4]
-70-dB
mute; f
i
= 100 Hz
[4]
-75-dB
standby; f
i
= 100 Hz
[4]
- 120 - dB
between pin VSSPn and SGND
operating; f
i
= 100 Hz
[4]
-80-dB
operating; f
i
= 1 kHz
[4]
-60-dB
mute; f
i
= 100 Hz
[4]
-80-dB
standby; f
i
= 100 Hz
[4]
- 115 - dB
Z
i
input impedance between the input pins and SGND 45 63 - kΩ
V
n(o)
output noise voltage operating; R
s
=0Ω
[5]
- 160 - µV
mute
[6]
-85-µV
α
cs
channel separation
[7]
-70-dB
|∆G
v
| voltage gain difference - - 1 dB
α
mute
mute attenuation f
i
= 1 kHz; V
i
= 2 V (RMS)
[8]
-75-dB
CMRR common mode rejection ratio V
i(CM)
= 1 V (RMS) - 75 - dB
η
po
output power efficiency SE, R
L
= 4 Ω -88-%
SE, R
L
= 6 Ω -90-
BTL, R
L
= 8 Ω -88-%
R
DSon(hs)
high-side drain-source on-state resistance
[9]
- 200 - mΩ
R
DSon(ls)
low-side drain-source on-state resistance
[9]
- 190 - mΩ