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TDA8950_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 9 September 2008 12 of 39
NXP Semiconductors
TDA8950
2 × 150 W class-D power amplifier
9. Limiting values
10. Thermal characteristics
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
P
supply voltage non-operating mode; V
DD
− V
SS
-90V
I
ORM
repetitive peak
output current
maximum output current limiting 9.2 - A
T
stg
storage temperature −55 +150 °C
T
amb
ambient temperature −40 +85 °C
T
j
junction temperature - 150 °C
V
MODE
voltage on pin
MODE
referenced to SGND 0 6 V
V
OSC
voltage on pin OSC 0 SGND
+ 6
V
V
I
input voltage referenced to SGND; pin IN1P; IN1M;
IN2P and IN2M
−5+5V
V
PROT
voltage on pin PROT referenced to voltage on pin VSSD 0 12 V
V
esd
electrostatic
discharge voltage
Human Body Model (HBM);
pin VSSP1 with respect to other pins
−1800 +1800 V
HBM; all other pins −2000 +2000 V
Machine Model (MM); all pins −200 +200 V
Charged Device Model (CDM) −500 +500 V
I
q(tot)
total quiescent
current
Operating mode; no load; no filter; no
RC-snubber network connected
-75mA
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction to ambient in free air 40 K/W
R
th(j-c)
thermal resistance from junction to case 1.1 K/W