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2000 Nov 15 3
Philips Semiconductors Preliminary specification
UHF amplifier module BGY280
CHARACTERISTICS
Z
S
=Z
L
=50Ω; P
D1,2
=0dBm; V
S1
=V
S2
= 3.6 V; V
C1,2
≤ 2.2 V; T
mb
=25°C; t
p
= 575 µs; δ =2:8;
f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
L
leakage current V
C1,2
=0.2V −−10 µA
I
CM1
, I
CM2
peak control current −−2mA
P
L1
load power GSM 900
V
C1
= 2.2 V 34.5 35.5 − dBm
V
C1
= 2.2 V; V
S1
=3.2V; T
mb
=25°C34 35 − dBm
P
L2
load power GSM 1800
V
C2
= 2.2 V 32.5 33.5 − dBm
V
C2
= 2.2 V; V
S1
=3.2V; T
mb
=25°C32 33 − dBm
G
P1
power gain GSM900 P
L1
= 35.5 dBm − 35.5 − dB
G
P2
power gain GSM1800 P
L2
=33dBm − 33.5 − dB
η
1
efficiency GSM900 P
L1
=35dBm 40 45 − %
η
2
efficiency GSM1800 P
L2
=32dBm 33 38 − %
H
2
, H
3
harmonics GSM900 P
L1
=34dBm −−−40 dBc
harmonics GSM1800 P
L2
=32dBm −−−35 dBc
VSWR
in
input VSWR of active device
V
S1,2
= 3.2 to 5 V; P
L1
=34dBm;
P
L2
=32dBm
− 3:1
input VSWR of inactive
device
V
S1,2
= 3.2 to 5 V; V
C1,2
≤ 0.5 V − 8:1
isolation GSM900 V
C1,2
=0.5V; P
D1,2
=3dBm −−54 −37 dBm
isolation GSM1800 V
C1,2
=0.5V; P
D1,2
=3dBm −−42 −37 dBm
second harmonic isolation
from GSM900 into GSM1800
P
L1
=35dBm −−21 −20 dBm
maximum slope −5dBm< P
L1,2
<P
Lmax
120 − 200 dB/V
t
r
carrier rise time P
L1
= 6 to 34 dBm; P
L2
=4to32dBm;
time to settle within −0.5 dB of final P
L
− 1.5 2 µs
t
f
carrier fall time P
L1
= 6 to 34 dBm; P
L2
=4to32dBm;
time to fall below −37 dBm
− 1.5 2 µs
P
n
noise power GSM900
P
L1
≤ 34 dBm; bandwidth = 100 kHz;
f = 925 - 935 MHz; f
c
= 897.5 MHz
−−−71 dBm
P
L1
≤ 34 dBm; bandwidth = 100 kHz;
f = 935 - 960 MHz; f
c
= 897.5 MHz
−−82 −80 dBm
noise power GSM1800 P
L2
≤ 32 dBm; bandwidth = 100 kHz;
f = 1805 - 1880 MHz; f
c
= 1747.5 MHz
−−80 −73 dBm
AM/PM conversion P
D1,2
= −0.5to0.5dBm;
P
L1,2
= constant during measurement
for P
L1
= 6 to 34 dBm and
P
L2
= 4 to 32 dBm
−−6 deg/dB
AM/AM conversion
P
L1
= 6 to 34 dBm; P
L2
=4to32dBm;
f = 100 kHz; P
D1,2
=5.4%
− 25 %