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Philips Semiconductors Product specification
SA5205AWide-band high-frequency amplifier
1997 Nov 07
4
DC ELECTRICAL CHARACTERISTICS
V
CC
=6V, Z
S
=Z
L
=Z
O
=50Ω and T
A
=25°C in all packages, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SA5205A
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max
UNIT
V
CC
Operating supply voltage range
Over temperature
5
5
8
8
V
V
I
CC
Supply current
Over temperature
20
19
25
25
32
33
mA
mA
S21 Insertion gain f=100MHz
Over temperature
17
16.5
19 21
21.5
dB
S11
In
p
ut return loss
f=100MHz 25
dB
S11
Inp
u
t
ret
u
rn
loss
DC - f
MAX
12
dB
S22
Out
p
ut return loss
f=100MHz 27
dB
S22
O
u
tp
u
t
ret
u
rn
loss
DC - f
MAX
12
dB
S12
Isolation
f=100MHz -25
dB
S12
Isolation
DC - f
MAX
-18
dB
t
R
Rise time 500 ps
t
P
Propagation delay 500 ps
BW Bandwidth ±0.5dB 450 MHz
f
MAX
Bandwidth -3dB 550 MHz
Noise figure (75Ω) f=100MHz 4.8 dB
Noise figure (50Ω) f=100MHz 6.0 dB
Saturated output power f=100MHz +7.0 dBm
1dB gain compression f=100MHz +4.0 dBm
Third-order intermodulation
intercept (output)
f=100MHz +17 dBm
Second-order intermodulation
intercept (output)
f=100MHz +24 dBm