2002 Sep 06 7
Philips Semiconductors Product specification
MMIC wideband amplifier BGM1012
handbook, halfpage
0 1000
f (MHz)
2000 4000
0
−50
−10
3000
−20
−30
−40
MLD912
s
12
2
(dB)
Fig.9 Isolation (s
12
2
) as a function offrequency;
typical values.
I
S
= 14.6 mA; V
S
= 3 V; P
D
= −30 dBm; Z
O
=50Ω.
handbook, halfpage
0
f (MHz)
(1)
(3)
25
20
15
10
1000 2000 4000
3000
MLD913
s
21
2
(dB)
(2)
Fig.10 Insertion gain (s
21
2
) as a function of
frequency; typical values.
P
D
= −30 dBm; Z
O
=50Ω.
(1) I
S
= 18.7 mA; V
S
= 3.3 V.
(2) I
S
= 14.6 mA; V
S
=3V.
(3) I
S
= 10.6 mA; V
S
= 2.7 V.
handbook, halfpage
−40 −30
P
D
(dBm)
P
L
(dBm)
−20 0
20
10
−10
−20
0
−10
MLD914
(1)
(2)
(3)
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
f = 1 GHz; Z
O
=50Ω.
(1) V
S
= 3.3 V.
(2) V
S
=3V.
(3) V
S
= 2.7 V.
handbook, halfpage
−40 −30
P
D
(dBm)
P
L
(dBm)
−20 0
(1)
(2)(3)
20
10
−10
−20
0
−10
MLD915
Fig.12 Load power as a function of drive power at
2.2 GHz; typical values.
f = 2.2 GHz; Z
O
=50Ω.
(1) V
S
= 3.3 V.
(2) V
S
=3V.
(3) V
S
= 2.7 V.