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2002 Sep 06 4
Philips Semiconductors Product specification
MMIC wideband amplifier BGM1012
CHARACTERISTICS
V
S
=3V; I
S
= 14.6 mA; T
j
=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
supply current 11 14.6 19 mA
s
21
2
insertion power gain f = 100 MHz 19 19.5 20 dB
f = 1 GHz 19 20.1 21 dB
f = 1.8 GHz 19 20.4 21 dB
f = 2.2 GHz 19 20.4 22 dB
f = 2.6 GHz 18 19.9 21 dB
f = 3 GHz 16 18.7 20 dB
R
LIN
return losses input f = 1 GHz 9 11 − dB
f = 2.2 GHz 13 15 − dB
R
L OUT
return losses output f = 1 GHz 11 14 − dB
f = 2.2 GHz 10 13 − dB
s
12
2
isolation f = 1 GHz 30 33 − dB
f = 2.2 GHz 35 38 − dB
NF noise figure f = 1 GHz − 4.8 5.1 dB
f = 2.2 GHz − 4.9 5.3 dB
BW bandwidth at s
21
2
−3 dB below flat gain at 1 GHz 3.1 3.6 − GHz
K stability factor f = 1 GHz 1.5 2.1 −−
f = 2.2 GHz 3 3.4 −−
P
L(sat)
saturated load power f = 1 GHz 8 9.7 − dBm
f = 2.2 GHz 3.5 5.6 − dBm
P
L1dB
load power at 1 dB gain compression; f = 1 GHz 4 6.0 − dBm
at 1 dB gain compression; f = 2.2 GHz 1.5 3.4 − dBm
IP3
(in)
input intercept point f = 1 GHz −4 −2 − dBm
f = 2.2 GHz −9 −7 − dBm
IP3
(out)
output intercept point f = 1 GHz 16 18 − dBm
f = 2.2 GHz 11 13 − dBm