Filter
Top Products
2002 Sep 06 2
Philips Semiconductors Product specification
MMIC wideband amplifier BGM1012
FEATURES
• Internally matched to 50 Ω
• Very wide frequency range (4 Ghz at 3 dB bandwidth)
• Very flat 20 dB gain (DC to 2.9 Ghz at 1 dB flatness)
• 10 dBm saturated output power at 1 GHz
• High linearity (18 dBm IP3
(out)
at 1 GHz)
• Low current (14.6 mA)
• Unconditionally stable.
APPLICATIONS
• LNB IF amplifiers
• Cable systems
• ISM
• General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN DESCRIPTION
1V
S
2, 5 GND2
3 RF out
4 GND1
6RFin
MAM455
132
4
1
63
2, 54
56
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: C2-.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S
DC supply voltage 3 4 V
I
S
DC supply current 14.6 − mA
s
21
2
insertion power gain f = 1 GHz 20.1 − dB
NF noise figure f = 1 GHz 4.8 − dB
P
L(sat)
saturated load power f = 1 GHz 9.7 − dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.