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SPECIFICATIONS
Power Rating:
Less than 0.02% total harmonic distortion at
any power level up to 115 watts continuous average power
per channel into 8 ohms at any frequency between 20 Hz
and 20
kHz
with both channels driven.
Input Impedance:
47,OOO
ohms.
Input Sensitivity:
1.55 volts rms for 1 15 watts into 8 ohms.
IM
Distortion
(SMPTE):
Less
than
O.OOS’%,
from
1
watt
to
1
15
Damping
Factor:300
to
1
kHzz
into
8
ohms
watts into8 ohms.
60
to 10
kHzzinto
8
ohms
Typical THD at 115 watts into 8 ohms:
I
kHz
-
0
00
25%
__
IO
kHz
-
0.007%
20
kHz
-
0.012’/‘
Frequency Response into 8 ohms:
-
3
dB.
2 Hz to 160
kHz
at 1 watt
+O,
-0.5
dB,
6
Hz to
60
kHz
at 1 15 watts
Rise Time:
10
kHz.
60
volts peak to peak square wave,
10%
to
90%
2.5 us.
Slew Rate:
10
kHz.
60
volts peak to peak square wave:
30
VI’,~
s.
Semiconductor Complement:
26
transistors.
8
power
Mosfets,
29
diodes, 4 zener diodes. 1 diode bridge.
Typical Channel Separation: 20
Hz:>
75
dB
1
kHz:>85
dB
20
kHz:
>6S
dB
Power Consumption:
1
15
watts into 8 ohms:
840
VA;
Quiescent: 125 VA.
Size:
5-1/8”
high. 16” wide, 10-l/2” deep.
Signal
to Noise Ratio, unweighted:
Better than 100
dB
at 115
watts into
8
ohms.
Net Weight:
26
Ibs.
Shipping Weight:
30
Ibs.
All Specifications are subject to change without notice.
Printed
in
USA
16