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2003 Feb 12 10
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
QUALITY SPECIFICATION
Quality in accordance with
“SNW-FQ-611D”
, if this type is used as an audio amplifier.
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
V
P
= 14.4 V; R
L
=4Ω; T
amb
=25°C; measurements in accordance with Fig.9; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-c)
thermal resistance from junction to case 1.5 K/W
R
th(j-a)
thermal resistance from junction to ambient in free air 40 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies V
P1
and V
P2
V
P
supply voltage 8 14.4 18 V
V
P(th+)
supply threshold voltage mute → on 7 − 9V
V
P(th−)
supply threshold voltage on → mute 7 − 9V
V
P(H1)
hysteresis (V
th+
− V
th−
)−200 − mV
I
q
quiescent current on and mute;
R
L
= open circuit
− 110 150 mA
I
stb
standby current standby − 350µA
Amplifier outputs OUT+ and OUT−
V
O
output voltage on and mute − 6.5 − V
V
OO
output offset voltage on and mute −−100 mV
∆V
OO
delta output offset voltage on ↔ mute −−30 mV
Mode select input MODE
V
I
input voltage 0 − V
P
V
I
I
input current V
MODE
= 14.4 V − 15 20 µA
V
th1+
threshold voltage 1+ standby → mute 1 − 2.2 V
V
th1−
threshold voltage 1− mute → standby 0.9 − 2V
V
msH1
hysteresis (V
th1+
− V
th1−
)−200 − mV
V
th2+
threshold voltage 2+ mute → on 3.3 − 4.2 V
V
th2−
threshold voltage 2− on → mute 3.3 − 4V
V
msH2
hysteresis (V
th2+
− V
th2−
)−200 − mV
Status I/O STAT
PIN STAT AS INPUT
V
st
input voltage 0 − V
P
V
I
st(H)
HIGH-level input current V
STAT
= 14.4 V − 3.5 4.5 mA
I
st(L)
LOW-level input current V
STAT
=0V −−350 −400 µA
V
th1+
threshold voltage 1+ fast mute → class-B −−2V
V
th1−
threshold voltage 1− class-B → fast mute 1 −−V
V
stH1
hysteresis (V
th1+
− V
th1−
)−200 − mV