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2001 Nov 02 2
Philips Semiconductors Product specification
860 MHz, 17 dB gain power doubler amplifier BGD885
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
DESCRIPTION
Hybrid amplifier module for CATV/MATV systems
operating over a frequency range of 40 to 860 MHz at a
voltage supply of 24 V (DC).
PINNING - SOT115D
PIN DESCRIPTION
1 input
2, 3, 5, 6, 7 common
4 10 V, 200 mA supply terminal
8+V
B
9 output
Fig.1 Simplified outline.
handbook, halfpage
7
8
9
246
351
Side view
MBK049
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 16.5 17.5 dB
I
tot
total current consumption (DC) V
B
= 24 V − 450 mA
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
DC supply voltage − 26 V
V
i
RF input voltage − 65 dBmV
T
stg
storage temperature −40 +100 °C
T
mb
operating mounting base temperature −20 +100 °C