Filter
Top Products
2001 Nov 01 6
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
handbook, halfpage
0
V
o
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−40
−50
−70
−80
−60
52
48
40
36
44
400 600 800
MLD348
(1)
(2)
(3)
(4)
Fig.5 Composite triple beat as a function of
frequency under tilted conditions.
Z
S
=Z
L
=75Ω; V
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
handbook, halfpage
0
V
o
(dBmV)
f (MHz)
X
mod
(dB)
200 1000
−40
−50
−70
−80
−60
52
48
40
36
44
400 600 800
MLD349
(1)
(2)
(3)
(4)
Fig.6 Cross modulationas afunction offrequency
under tilted conditions.
Z
S
=Z
L
=75Ω; V
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
handbook, halfpage
0
V
o
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MLD350
(1)
(2)
(3)
(4)
Fig.7 Composite second order distortion as a
function of frequency under tilted conditions.
Z
S
=Z
L
=75Ω; V
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.