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2001 Nov 01 5
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
handbook, halfpage
0
V
o
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MLD345
(1)
(2)
(3)
(4)
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
Z
S
=Z
L
=75Ω; V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
handbook, halfpage
0
V
o
(dBmV)
f (MHz)
X
mod
(dB)
200 1000
−40
−50
−70
−80
−60
52
48
40
36
44
400 600 800
MLD346
(1)
(2)
(3)
(4)
Fig.3 Cross modulationas afunction offrequency
under tilted conditions.
Z
S
=Z
L
=75Ω; V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
handbook, halfpage
0
V
o
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−60
−70
−90
−100
−80
52
48
40
36
44
400 600 800
MLD347
(1)
(2)
(3)
(4)
Fig.4 Composite second order distortion as a
function of frequency under tilted conditions.
Z
S
=Z
L
=75Ω; V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.