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2001 Nov 02 3
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain power doubler amplifier BGD712
CHARACTERISTICS
Bandwidth 40 to 750 MHz; V
B
= 24 V; T
mb
=35°C; Z
S
=Z
L
=75Ω
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 45 MHz 18.2 18.5 18.8 dB
f = 750 MHz 19 19.5 20 dB
SL slope straight line f = 45 to 750 MHz; note 1 0.5 1 1.5 dB
FL flatness straight line f = 45 to 100 MHz −−±0.35 dB
f = 100 to 700 MHz −−±0.5 dB
f = 700 to 750 MHz −−±0.15 dB
S
11
input return losses f = 45 to 80 MHz 23 −−dB
f = 80 to 160 MHz 23 −−dB
f = 160 to 320 MHz 21 −−dB
f = 320 to 550 MHz 20 −−dB
f = 550 to 650 MHz 20 −−dB
f = 650 to 750 MHz 19 −−dB
f = 750 to 790 MHz 17 −−dB
S
22
output return losses f = 45 to 80 MHz 23 −−dB
f = 80 to 160 MHz 23 −−dB
f = 160 to 320 MHz 20 −−dB
f = 320 to 550 MHz 20 −−dB
f = 550 to 650 MHz 19 −−dB
f = 650 to 750 MHz 19 −−dB
f = 750 to 790 MHz 17 −−dB
S
21
phase response f = 50 MHz −45 − +45 deg
CTB composite triple beat 112 channels flat; V
o
= 44 dBmV;
f
m
= 745.25 MHz
−−−62 dB
79 channels flat; V
o
= 44 dBmV;
f
m
= 547.25 MHz
−−−68 dB
79 channels; f
m
= 445.25 MHz;
V
o
= 49.3 dBmV at 547 MHz; note 2
−−−63 dB
X
mod
cross modulation 112 channels flat; V
o
= 44 dBmV;
f
m
= 55.25 MHz
−−−63 dB
79 channels flat; V
o
= 44 dBmV;
f
m
= 55.25 MHz
−−−69 dB
79 channels; f
m
= 745.25 MHz;
V
o
= 49.3 dBmV at 547 MHz; note 2
−−−60 dB