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2001 Nov 02 2
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain power doubler amplifier BGD712
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
APPLICATIONS
• CATV systems operating in the 40 to 750 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5+V
B
7, 8 common
9 output
handbook, halfpage
7
8
9
2
351
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 45 MHz 18.2 18.8 dB
f = 750 MHz 19 20 dB
I
tot
total current consumption (DC) V
B
= 24 V 380 410 mA
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
supply voltage − 30 V
V
i
RF input voltage − 70 dBmV
T
stg
storage temperature −40 +100 °C
T
mb
operating mounting base temperature −20 +100 °C