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2002 Sep 10 3
Philips Semiconductors Product specification
MMIC wideband amplifier BGA2712
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
S
=5V; I
S
= 12.3 mA; T
j
=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to
solder point
P
tot
= 200 mW; T
s
≤ 90 °C 300 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
supply current 9 12.3 15 mA
s
21
2
insertion power gain f = 100 MHz 20 20.8 22 dB
f = 1 GHz 20 21.3 22 dB
f = 1.8 GHz 20 22 23 dB
f = 2.2 GHz 20 22 23 dB
f = 2.6 GHz 19 21.2 22 dB
f = 3 GHz 16 19.3 21 dB
R
LIN
return losses input f = 1 GHz 12 14 − dB
f = 2.2 GHz 8 10 − dB
R
L OUT
return losses output f = 1 GHz 17 20 − dB
f = 2.2 GHz 15 18 − dB
s
12
2
isolation f = 1.6 GHz 31 33 − dB
f = 2.2 GHz 36 39 − dB
NF noise figure f = 1 GHz − 3.9 4.3 dB
f = 2.2 GHz − 4.3 4.7 dB
BW bandwidth at s
21
2
−3 dB below flat gain at 1 GHz 2.8 3.2 − GHz
K stability factor f = 1 GHz 1.5 2 −−
f = 2.2 GHz 2.5 3 −−
P
L(sat)
saturated load power f = 1 GHz 3 4.8 − dBm
f = 2.2 GHz 0 1.3 − dBm
P
L1dB
load power at 1 dB gain compression; f = 1 GHz −2 0.2 − dBm
at 1 dB gain compression; f = 2.2 GHz −4 −2 − dBm
IP3
(in)
input intercept point f = 1 GHz −12 −10 − dBm
f = 2.2 GHz −14 −16 − dBm
IP3
(out)
output intercept point f = 1 GHz 9 11 − dBm
f = 2.2 GHz 4 6 − dBm