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2002 Sep 10 2
Philips Semiconductors Product specification
MMIC wideband amplifier BGA2712
FEATURES
• Internally matched to 50 Ω
• Wide frequency range (3.2 GHz at 3 dB bandwidth)
• Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)
• 5 dBm saturated output power at 1 GHz
• Good linearity (11 dBm IP3
(out)
at 1 GHz)
• Unconditionally stable (K > 1.5).
APPLICATIONS
• LNB IF amplifiers
• Cable systems
• ISM
• General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN DESCRIPTION
1V
S
2, 5 GND2
3 RF out
4 GND1
6RFin
MAM455
132
4
1
63
2, 54
56
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: E2-.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S
DC supply voltage 5 6 V
I
S
DC supply current 12.3 − mA
s
21
2
insertion power gain f = 1 GHz 21.3 − dB
NF noise figure f = 1 GHz 3.9 − dB
P
L(sat)
saturated load power f = 1 GHz 4.8 − dBm
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
DC supply voltage RF input AC coupled − 6V
I
S
supply current − 35 mA
P
tot
total power dissipation T
s
≤ 90 °C − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
operating junction temperature − 150 °C
P
D
maximum drive power − 10 dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.