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1999 Jul 23 3
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
RF input AC coupled; T
j
=25°C; unless otherwise specified.
Note
1. See application note RNR-T45-99-B-0514.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
supply voltage RF input AC coupled − 4.5 V
V
CTRL
voltage on control pin − 2V
I
S
supply current (DC) forced by DC voltage on RF input
or I
CTRL
− 30 mA
I
CTRL
control current − 3mA
P
tot
total power dissipation T
s
≤ 100 °C − 135 mW
T
stg
storage temperature −65 +150 °C
T
j
operating junction temperature − 150 °C
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 350 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
supply current V
VS-OUT
= 2.5 V; I
CTRL
= 0.4 mA 3 4.5 6 mA
V
VS-OUT
= 2.5 V; I
CTRL
= 1.0 mA 8 11 15 mA
MSG maximum stable gain V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 900 MHz
− 24 − dB
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 1800 MHz
− 16 − dB
|s
21
|
2
insertion power gain V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 900 MHz
18 19 − dB
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 1800 MHz
13 14 − dB
s
12
isolation V
VS-OUT
= 2.5 V; I
VS-OUT
=0;
f = 900 MHz
− 26 − dB
V
VS-OUT
= 2.5 V; I
VS-OUT
=0;
f = 1800 MHz
− 20 − dB
NF noise figure V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 900 MHz; Γ
S
= Γ
opt
− 1.8 2 dB
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 1800 MHz; Γ
S
= Γ
opt
− 1.8 2 dB
IP3
(in)
input intercept point; note 1 V
VS-OUT
= 2.3 V; I
VS-OUT
= 3.6 mA;
f = 900 MHz
−−6.5 − dBm
V
VS-OUT
= 2.3 V; I
VS-OUT
= 3.5 mA;
f = 1800 MHz
−−4.8 − dBm