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1999 Jul 23 2
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003
FEATURES
• Low current
• Very high power gain
• Low noise figure
• Integrated temperature compensated biasing
• Control pin for adjustment bias current
• Supply and RF output pin combined.
APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
• Low noise amplifiers
• Satellite television tuners (SATV)
• High frequency oscillators.
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin SOT343R package.
PINNING
PIN DESCRIPTION
1 GND
2 RF in
3 CTRL (bias current control)
4V
S
+ RF out
handbook, halfpage
Top view
MAM427
21
43
BIAS
CIRCUIT
CTRL
RFin GND
V
S
+RFout
Marking code: A3.
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S
DC supply voltage RF input AC coupled − 4.5 V
I
S
DC supply current V
VS-OUT
= 2.5 V; I
CTRL
= 1 mA;
RF input AC coupled
11 − mA
MSG maximum stable gain V
VS-OUT
= 2.5 V; f = 1800 MHz;
T
amb
=25°C
16 − dB
NF noise figure V
VS-OUT
= 2.5 V; f = 1800 MHz; Γ
S
= Γ
opt
1.8 − dB