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Philips Semiconductors Product data
NE/SA/SE5534/5534ASingle low noise operational amplifier
2001 Aug 03
4
AC ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C, V
S
= ±15 V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
NE/SA5534/5534A SE5534/5534A
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max Min Typ Max
UNIT
R
OUT
Output resistance
A
V
= 30 dB closed-loop
f = 10 kHz; R
L
= 600 Ω;
C
C
= 22 pF
0.3 0.3 Ω
Transient response
Voltage-follower, V
IN
= 50 mV
R
L
= 600 Ω; C
C
= 22 pF,
C
L
= 100 pF
t
R
Rise time 20 20 ns
Overshoot 20 20 %
Transient res
p
onse
V
IN
= 50 mV, R
L
= 600 Ω
Transient
res onse
C
C
= 47 pF, C
L
= 500 pF
t
R
Rise time 50 50 ns
Overshoot 35 35 %
A
V
Gain f = 10 kHz, C
C
= 0 6 6 V/mV
f = 10 kHz, C
C
= 22 pF 2.2 2.2 V/mV
GBW Gain bandwidth product C
C
= 22 pF, C
L
= 100 pF 10 10 MHz
SR
Slew rate
C
C
= 0 13 13 V/µs
SR
Slew
rate
C
C
= 22 pF 6 6 V/µs
V
OUT
= ±10 V, C
C
= 0 pF 200 200 kHz
Power bandwidth
V
OUT
= ±10 V, C
C
= 22 pF 95 95 kHz
Power
bandwidth
V
OUT
= ±14 V, R
L
= 600 Ω 70 70 kHz
C
C
= 22 pF, V
CC
= ±18 V
ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C, V
S
= 15 V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
NE/SA/SE5534 NE/SA/SE5534A
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max Min Typ Max
UNIT
V
NOISE
In
p
ut noise voltage
f
O
= 30 Hz 7 5.5 7 nV/√Hz
V
NOISE
In ut
noise
voltage
f
O
= 1 kHz 4 3.5 4.5 nV/√Hz
I
NOISE
In
p
ut noise current
f
O
= 30 Hz 2.5 1.5 pA/√Hz
I
NOISE
In ut
noise
current
f
O
= 1 kHz 0.6 0.4 pA/√Hz
Broadband noise figure f = 10 Hz to 20 kHz; R
S
= 5 kΩ 0.9 dB
Channel separation f = 1 kHz; R
S
= 5 kΩ 110 110 dB