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Philips Semiconductors Product specification
µA741/µA741C/SA741CGeneral purpose operational amplifier
1994 Aug 31
2
DC ELECTRICAL CHARACTERISTICS
T
A
= 25°C, V
S
= ±15V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
µA741 µA741C
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max Min Typ Max
UNIT
V
OS
Offset voltage R
S
=10kΩ 1.0 5.0 2.0 6.0 mV
R
S
=10kΩ, over temp. 1.0 6.0 7.5 mV
∆V
OS
/∆T 10 10 µV/°C
I
OS
Offset current 20 200 20 200 nA
Over temp. 300 nA
T
A
=+125°C 7.0 200 nA
T
A
=-55°C 20 500 nA
∆I
OS
/∆T 200 200 pA/°C
I
BIAS
Input bias current 80 500 80 500 nA
Over temp. 800 nA
T
A
=+125°C 30 500 nA
T
A
=-55°C 300 1500 nA
∆I
B
/∆T 1 1 nA/°C
R
L
=10kΩ ±12 ±14 ±12 ±14 V
V
OUT
Output voltage swing
R
L
=2kΩ, over temp. ±10 ±13 ±10 ±13 V
R
L
=2kΩ, V
O
=±10V 50 200 20 200 V/mV
A
VOL
Large-signal voltage gain R
L
=2kΩ, V
O
=±10V,
over temp. 25 15 V/mV
Offset voltage adjustment range ±30 ±30 mV
R
S
≤10kΩ 10 150 µV/V
PSRR Supply voltage rejection ratio
R
S
≤10kΩ, over temp. 10 150 µV/V
70 90 dB
CMRR Common-mode rejection ratio
Over temp. 70 90 dB
1.4 2.8 1.4 2.8 mA
I
CC
Supply current T
A
=+125°C 1.5 2.5 mA
T
A
=-55°C 2.0 3.3 mA
V
IN
Input voltage range (µA741, over temp.) ±12 ±13 ±12 ±13 V
R
IN
Input resistance 0.3 2.0 0.3 2.0 MΩ
50 85 50 85 mW
P
D
Power consumption T
A
=+125°C 45 75 mW
T
A
=-55°C 45 100 mW
R
OUT
Output resistance 75 75 Ω
I
SC
Output short-circuit current 10 25 60 10 25 60 mA