Philips TDA6101Q Stereo Amplifier User Manual


 
1995 Feb 07 6
Philips Semiconductors Preliminary specification
Video output amplifier TDA6101Q
CHARACTERISTICS
Operating range: T
amb
= 20 to 65 °C; V
DDH
= 180 to 210 V; V
DDL
= 10.8 to 13.2 V; V
ip
= 2.6 to 5 V;
V
om
=1.4VtoV
DDL
.
Test conditions (unless otherwise specified): T
amb
=25°C; V
DDH
= 200 V; V
DDL
= 12 V; V
ip
=5V; V
om
=6V; C
L
=10pF
(C
L
consists of parasitic and cathode capacitance); measured in test circuit Fig.3.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DDH
quiescent HIGH voltage supply current V
oc
= 0.5V
DDH
3.5 4.4 5.5 mA
I
DDL
quiescent LOW voltage supply current V
oc
= 0.5V
DDH
2.2 2.8 3.5 mA
I
bias
input bias current V
oc
= 0.5V
DDH
0 20 µA
I
offset
input offset current V
oc
= 0.5V
DDH
3 +3 µA
I
om(offset)
offset current of measurement output I
oc
=0µA;
1.0V<V
13
< 1.0 V;
1.4 V < V
om
<V
DDL
50+5µA
linearity of current transfer 10 µA<I
oc
< 3 mA;
1.0V<V
13
< 1.0 V;
1.4 V < V
om
<V
DDL
0.9 1.0 1.1
V
offset
input offset voltage V
oc
= 0.5V
DDH
50 +50 mV
V
oc(min)
minimum output voltage V
13
= 1V −−20 V
V
oc(max)
maximum output voltage V
13
= 1V V
DDH
12 −−V
GB gain-bandwidth product of open-loop
gain: V
fb
/V
i, dm
f = 500 kHz; V
ocDC
= 100 V 0.8 GHz
B
S
small signal bandwidth V
ocAC
= 60 V (p-p);
V
ocDC
= 100 V
79MHz
B
L
large signal bandwidth V
ocAC
= 100 V (p-p);
V
ocDC
= 100 V
5.5 7 MHz
t
pd
cathode output propagation delay time
50% input to 50% output
V
ocAC
= 100 V (p-p);
V
ocDC
= 100 V square
wave; f < 1 MHz;
t
r
=t
f
=40ns;
see Figs 4 and 5
27 38 49 ns
t
r
cathode output rise time 10% output to
90% output
V
oc
= 50 to 150 V square
wave; f < 1 MHz; t
f
= 40 ns;
see Fig.4
43 55 68 ns
t
f
cathode output fall time 90% output to
10% output
V
oc
= 150 to 50 V square
wave; f < 1 MHz; t
r
= 40 ns;
see Fig.5
43 55 68 ns
t
s
settling time 50% input to
(99% < output < 101%)
V
ocAC
= 100 V (p-p);
V
ocDC
= 100 V square
wave; f < 1 MHz;
t
r
=t
f
=40ns;
see Figs 4 and 5
−−350 ns
SR slew rate between 50 V to 150 V V
13
= 2 V (p-p) square
wave; f < 1 MHz;
t
r
=t
f
=40ns
1700 V/µs
I
om
I
oc
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