Philips SA1458 Stereo Amplifier User Manual


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Philips Semiconductors Linear Products Product specification
MC/SA1458/MC1558General purpose operational amplifier
August 31, 1994
61
DC ELECTRICAL CHARACTERISTICS (Continued)
T
A
=25°C V
CC
=±15V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MC1458 SA1458
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max Min Typ Max
UNIT
V
OS
Offset voltage R
S
=10kΩ 2.0 6.0 2.0 6.0 mV
R
S
=10kΩ, over temp. 7.5 7.5 mV
∆V
OS
Offset voltage Over temperature 12 12 µV/°C
I
OS
Offset current 20 200 20 200 nA
Over temperature 300 500 nA
∆I
OS
Offset current Over temperature 0.10 0.10 nA/°C
I
BIAS
Input bias current 80 500 80 500 nA
Over temperature 800 1500 nA
∆I
BIAS
Bias current Over temperature 1.0 1.0 nA/°C
V
OUT
Output voltage swing
R
L
=10kΩ, over temp. ±12 ±14 ±12 ±14
V
V
OUT
Output voltage swing
R
L
=2kΩ, over temp. ±10 ±13 ±10 ±13
V
R
L
=2kΩ, V
O
=±10V 25 200 20 200 V/mV
A
VOL
Large-signal voltage gain R
L
=2kΩ, V
O
=±10V,
Over temperature 15 15 V/mV
Offset voltage adjustment range ±30 ±30 mV
PSRR Power supply rejection ratio R
S
≤10kΩ 30 150 30 150 µV/V
CMRR Common-mode rejection ratio 70 90 70 90 dB
I
CC
Supply current 2.3 5.6 2.3 5.6 mA
V
IN
Input voltage range ±12 ±13 ±12 ±13 V
R
IN
Input resistance 0.3 1 0.3 1 MΩ
P
D
Power consumption 70 170 70 170 mW
Channel separation 120 120 dB
I
SC
Output short-circuit current 25 25 mA
AC ELECTRICAL CHARACTERISTICS
T
A
=25°C V
S
=±15V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MC1458, SA1458,
MC1558
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max
UNIT
R
IN
Parallel input resistance Open-loop, f=20Hz 0.3 MΩ
Common-mode input impedance f=20Hz 200 MΩ
Equivalent input noise voltage A
V
=100, R
S
=10kΩ, BW=1.0kHz, f=1.0kHz 30
nVń Hz
Ǹ
BW Power bandwidth A
V
=1, R
L
=2.0kΩ, THD≤5%, V
OUT
=20V
P-P
14 kHz
Phase margin 65 degrees
A
V
Gain margin 11 dB
Unity gain crossover frequency Open loop 1.0 MHz
Transient response unity gain V
IN
=20mV, R
L
=2kΩ, C
L
≤100pF
t
R
Rise time 0.3 µs
Overshoot 5.0 %
SR Slew rate C
L
≤100pF, R
L
≥2kΩ, V
IN
=±10V 0.8 V/µs
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