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2000 Oct 17 3
Philips Semiconductors Product specification
UHF amplifier module BGY1916
CHARACTERISTICS
T
mb
=25°C; V
S1
=5V; V
S2
= 26 V; P
L
= 16 W; Z
S
=Z
L
=50Ω unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
f frequency 1930 − 1990 MHz
I
S1
supply current − 80 − mA
I
S2
supply current P
D
< −60 dBm − 430 − mA
P
L
load power P
D
<63mW 16 −−W
G
p
power gain 24 − 28 dB
η efficiency 30 −−%
H
2
second harmonic −−−35 dBc
H
3
third harmonic −−−45 dBc
VSWR
in
input VSWR −−1.6:1
stability VSWR ≤ 2 : 1 through all phases;
P
L
≤ 16 W; V
S2
=25to27V
−−−60 dBc
reverse intermodulation P
carrier
= 16 W; P
reverse
= −40 dBc;
f
i
=f
c
±200 kHz
−−−53 dBc
B AM bandwidth corner frequency=3dB;
P
carrier
= 16 W; modulation = 20%
2 −−MHz
ruggedness VSWR ≤ 5 : 1 through all phases no degradation
Fig.2 Power gain and efficiency as functions of
load power; typical values.
f = 1960 MHz; V
S1
= 5 V; V
S2
= 26 V; Z
S
=Z
L
=50Ω; T
mb
=25°C.
handbook, halfpage
0
30
G
p
(dB)
G
p
η
(%)
η
20
10
0
60
40
20
0
10 20
P
L
(W)
30
MGD187
Fig.3 Load power as a function of input power;
typical values.
f = 1960 MHz; V
S1
= 5 V; V
S2
= 26 V; Z
S
=Z
L
=50Ω; T
mb
=25°C.
handbook, halfpage
0
30
P
L
(W)
20
10
0
40 80
P
IN
(mW)
120
MGD186