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1998 May 13 2
Philips Semiconductors Product specification
HF amplifier modules BGY148A; BGY148B
FEATURES
• Single 6 V nominal supply voltage
• 3 W output power
• Easy control of output power by DC voltage
• Silicon bipolar technology
• Standby current less than 100 µA.
APPLICATIONS
• Portable communication equipment operating in the
400 to 440 MHz and 430 to 488 MHz frequency ranges
respectively.
DESCRIPTION
The BGY148A and BGY148B are three-stage UHF
amplifier modules in a SOT421A package. Each module
consists of three NPN silicon planar transistor dies
mounted together with matching and bias circuit
components on a metallized ceramic substrate. The
modules produce an output power of 3 W into a load of
50 Ω with an RF drive power of 10 mW.
PINNING - SOT421A
PIN DESCRIPTION
1 RF input
2V
C
3V
S
4 RF output
Flange ground
Fig.1 Simplified outline (SOT421A).
handbook, halfpage
MSA483
12 34
Top view
QUICK REFERENCE DATA
RF performance at T
mb
=25°C.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. In order to control the mounting-base temperature, proper heatsinking of the underside of the device is required.
It is therefore advisable that the device is mounted on a printed-circuit board with metallized through holes.
TYPE
MODE OF
OPERATION
f
(MHz)
V
S
(V)
P
L
(W)
G
p
(dB)
η
(%)
Z
S
; Z
L
(Ω)
BGY148A CW 400 to 440 6 ≥3 ≥24.8 typ. 53 50
BGY148B CW 430 to 488 6 ≥3 ≥24.8 typ. 53 50
SYMBOL PARAMETER MIN. MAX. UNIT
V
S
DC supply voltage − 8.5 V
V
C
DC control voltage − 4V
P
D
input drive power − 20 mW
P
L
load power − 3.5 W
T
stg
storage temperature −40 +100 °C
T
mb
operating mounting-base temperature; note1 −30 +100 °C