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2001 Nov 01 3
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
CHARACTERISTICS
Bandwidth 40 to 900 MHz; V
B
= 24 V; T
mb
=35°C; Z
S
=Z
L
=75Ω
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 21.2 21.5 21.8 dB
f = 900 MHz 22 22.5 23 dB
SL slope straight line f = 40 to 900 MHz 0.5 1 1.5 dB
FL flatness straight line f = 40 to 900 MHz −−±0.35 dB
s
11
input return losses f = 40 to 80 MHz 22 25 − dB
f = 80 to 160 MHz 21 24 − dB
f = 160 to 320 MHz 18 23 − dB
f = 320 to 550 MHz 17 23 − dB
f = 550 to 900 MHz 16 20 − dB
s
22
output return losses f = 40 to 80 MHz 22 25 − dB
f = 80 to 160 MHz 21 25 − dB
f = 160 to 320 MHz 20 23 − dB
f = 320 to 550 MHz 19 22 − dB
f = 550 to 650 MHz 18 24 − dB
f = 650 to 750 MHz 17 23 − dB
f = 750 to 900 MHz 16 21 − dB
s
21
phase response f = 50 MHz −45 − +45 deg
CTB composite triple beat 49 chs flat; V
o
= 47 dBmV; f
m
= 859.25 MHz −−68.5 −66 dB
77 chs flat; V
o
= 44 dBmV; f
m
= 547.25 MHz −−70 −67 dB
110 chs flat; V
o
= 44 dBmV; f
m
= 745.25 MHz −−63 −61 dB
129 chs flat; V
o
= 44 dBmV; f
m
= 859.25 MHz −−59 −57 dB
110 chs; f
m
= 397.25 MHz;
V
o
= 49 dBmV at 550 MHz; note 1
−−62.5 −60.5 dB
129 chs; f
m
= 697.25 MHz;
V
o
= 49.5 dBmV at 860 MHz; note 2
−−57 −54.5 dB
X
mod
cross modulation 49 chs flat; V
o
= 47 dBmV; f
m
= 55.25 MHz −−64 −62 dB
77 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz −−67.5 −65 dB
110 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz −−64 −61.5 dB
129 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz −−61 −60 dB
110 chs; f
m
= 397.25 MHz;
V
o
= 49 dBmV at 550 MHz; note 1
−−60 −58 dB
129 chs; f
m
= 859.25 MHz;
V
o
= 49.5 dBmV at 860 MHz; note 2
−−56.5 −55 dB