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2002 Jul 03 3
Philips Semiconductors Product specification
MMIC wideband amplifier BGA2748
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
THERMAL RESISTANCE
CHARACTERISTICS
V
S
=3V; I
S
= 5.7 mA; f = 1 GHz; T
j
=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
DC supply voltage RF input AC coupled − 4V
I
S
supply current − 15 mA
P
tot
total power dissipation T
s
≤ 80 °C − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
operating junction temperature − 150 °C
P
D
maximum drive power − 10 dBm
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to solder
point
P
tot
= 200 mW; T
s
≤ 80 °C 300 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
supply current 4.5 5.7 8 mA
|s
21
|
2
insertion power gain f = 1 GHz − 21.8 − dB
f = 2 GHz − 18.5 − dB
R
LIN
return losses input f = 1 GHz − 18 − dB
f = 2 GHz − 14 − dB
R
L OUT
return losses output f = 1 GHz − 7 − dB
f = 2 GHz − 8 − dB
NF noise figure f = 1 GHz − 1.9 − dB
f = 2 GHz − 2.4 − dB
BW bandwidth at |s
21
|
2
−3 dB below flat gain at 1 GHz − 1.9 − GHz
P
L(sat)
saturated load power f = 1 GHz −−2.3 − dBm
f = 2 GHz −−3.3 − dBm
P
L 1 dB
load power at 1 dB gain compression; f = 1 GHz −−9.2 − dBm
at 1 dB gain compression; f = 2 GHz −−10.9 − dBm
IP3
(in)
input intercept point f = 1 GHz −−23.7 − dBm
f = 2 GHz −−19.9 − dBm
IP3
(out)
output intercept point f = 1 GHz −−1.9 − dBm
f = 2 GHz −−1.4 − dBm