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2001 Oct 19 3
Philips Semiconductors Product specification
MMIC wideband amplifier BGA2711
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
THERMAL RESISTANCE
CHARACTERISTICS
V
S
=5V; I
S
= 12.6 mA; f = 1 GHz; T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
DC supply voltage RF input AC coupled − 6V
I
S
supply current − 20 mA
P
tot
total power dissipation T
s
≤ 80 °C − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
operating junction temperature − 150 °C
P
D
maximum drive power − 10 dBm
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to solder
point
P
tot
= 200 mW; T
s
≤ 80 °C 300 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
supply current 10 12.6 16 mA
|s
21
|
2
insertion power gain f = 1 GHz − 13.1 − dB
f = 2 GHz − 13.9 − dB
R
LIN
return losses input f = 1 GHz − 11 − dB
f = 2 GHz − 10 − dB
R
L OUT
return losses output f = 1 GHz − 18 − dB
f = 2 GHz − 13 − dB
NF noise figure f = 1 GHz − 4.8 − dB
f = 2 GHz − 4.8 − dB
BW bandwidth at |s
21
|
2
−3 dB below flat gain at 1 GHz − 3.6 − GHz
P
L(sat)
saturated load power f = 1 GHz − 2.8 − dBm
f = 2 GHz − 0.6 − dBm
P
L 1 dB
load power at 1 dB gain compression; f = 1 GHz −−0.7 − dBm
at 1 dB gain compression; f = 2 GHz −−1.8 − dBm
IP3
(in)
input intercept point f = 1 GHz −−4.8 − dBm
f = 2 GHz −−8.5 − dBm
IP3
(out)
output intercept point f = 1 GHz − 8.3 − dBm
f = 2 GHz − 5.4 − dBm