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Rev.4.00 Jun 21, 2006 page 1 of 12
HSG2004
SiGe HBT
High Frequency Medium Power Amplifier
REJ03G0484-0400
Rev.4.00
Jun 21, 2006
Features
• High Transition Frequency
f
T
= 30 GHz typ.
• Low Distortion and Excellent Linearity
P1dB at output = +14.5 dBm typ. f = 5.8 GHz
• High Collector to Emitter Voltage
V
CEO
= 5 V
• Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone.
Outline
Renesas Package code: PWQN0008ZA-A
(Package name: HWQFN-8 <TNP-8TV>)
1. Collecto
r
2. Collecto
r
3. Collecto
r
4. Emitter
5. Emitter
6. Base
7. Emitter
8. Emitter
9. Emitter
1
3
7
6
5
2
4
8
9
1
3
7
6
5
2
4
8
9
2004
Note: Marking is “2004”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
12 V
Collector to emitter voltage V
CEO
5 V
Emitter to base voltage V
EBO
1.2 V
Collector current I
C
200 mA
Collector power dissipation Pc 1
Note
W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: Value on PCB (40 x 40 x 1.0 mm)